[Electronics] Sample prep of 9X layer 3D NAND Flash Memory for Atom Probe Tomography

A 3DAP sample of a 3D NAND flash memory was prepared using orthogonally arranged FIB-SEM.
The center of the memory hole on the 10th layer was precisely positioned on the apex with a diameter of 100 nm or less. Realtime STEM of the orthogonally arranged FIB-SEM allows precise sample preparation without losing sight of target structures or an end point.
#3DNAND #MemoryHole #FlashMemory #FIBSEM #electronmicroscopy #ElectronMicroscope

Available instruments for this measurement are :
Orthogonally-arranged FIB-SEM

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