[Electronics] FIB-SEM tomography of 9X layer 3D NAND flash memory

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Cross-sectional SEM of 3D NAND flash memories were acquired on orthogonally-arranged FIB-SEM with less image distortion. While the length between top and bottom gate electrode layers is 4 μm for 64 layer flash memory, that is 5 μm for 9X layer one. 3D model was generated from serial cross-sectional images for further structural analysis on arbitrary slice.
#3DNAND #FlashMemory #FIB-SEM #ElectronMicroscope #electronmicroscopy

Available instruments for this measurement are :
Orthogonally arranged FIB-SEM

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  1. Hitachi Electron Microscope
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  3. Microscopy
  4. Electron Microscope
  5. Electron Microscopy
  6. Scanning Electron Microscope
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