1200 V Silicon Carbide MOSFETs and Diodes | Datasheet Preview

The 1200-volt silicon carbide MOSFETs include a wide variety of on-resistances and package options, enabling designers to select optimal parts for their applications. These devices are designed for better hard-switching performance. The 1200-volt silicon carbide Schottky diodes are also available in a variety of package options as well as current ratings. They are more robust and reliable than standard Schottky barrier diodes, and are designed to achieve effectively no switching losses, reduce heat-sink requirements, and maintain higher efficiency. Combining the MOSFETs and the diodes allow for a powerful combination of higher efficiency in demanding applications. Ideal applications include uninterruptible power supplies, solar and energy storage systems, electric vehicle charging, and more.
● 1200 V SiC MOSFETs include a wide variety of on-resistances (RDS(ON)) and package options
● Designed for better hard-switching performance
● 1200 V SiC Schottky diodes are also available in a variety of package options as well as current ratings
● Designed to achieve effectively no switching losses, reduce heat-sink requirements, and maintain higher efficiency
● Ideal applications include:
○ uninterruptible power supplies (UPS)
○ solar and energy storage systems
○ electric vehicle charging