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Silicon Carbide (SiC) MOSFET Family
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Find out about Diotec Semiconductor's SiC MOSFET Family which components are highly suitable for EV charging systems for electric vehicles, solar inverters, and other power supply applications in the automotive, industrial, and commercial sectors.
The specifications of these silicon carbide MOSFETs are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance (RDSon), low gate charge (from -8 V to 22 V continuous gate-source-voltage (VGSS)) and more.
The specifications of these silicon carbide MOSFETs are low switching losses, high voltage levels (1200 V), maximum 53 mΩ to 23 mΩ on-state resistance (RDSon), low gate charge (from -8 V to 22 V continuous gate-source-voltage (VGSS)) and more.
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