ARFTG94 E4 - Device Noise Parameter Characterization: Towards Extraction Automation

Presented by Luciano Boglione. For the first time, the experimental values of the noise parameters of a set of GaAs pHEMT obtained through the standard source tuner-based Lane technique and a new size-based, tuner-less technique, are compared. The noise parameter data has been obtained
independently by 2 renowned microwave laboratories after sharing the same set of
devices. The laboratories are located at the University of Messina, Italy, and at the US
Naval Research Laboratory in Washington, DC. This paper demonstrates 2 new
accomplishments: that the noise parameters obtained through the new tuner-less
technique are equivalent to the noise parameters obtained through the standard tunerbased technique; and that the new tuner-less extraction has been extended successfully
up to 26 GHz. The new size-based technique supports the implementation of an automatic
noise parameters extraction in a similar fashion to the automatic determination of
scattering parameters.