Working of Depletion-Type MOSFET

Analog Electronics: Working of Depletion-Type MOSFET
Topics Discussed:
1. Similarities between depletion-type MOSFET and JFET.
2. Effect of increasing drain to source voltage on drain current.
3. Maximum drain current in n-channel depletion-type MOSFET and n-channel JFET.
4. Working of n-channel depletion-type MOSFET when gate to source voltage is 0V.
5. Working of n-channel depletion-type MOSFET when gate to source voltage is negative.
6. Working of n-channel depletion-type MOSFET when gate to source voltage is positive.
7. Homework problem.

Music:
Axol x Alex Skrindo - You [NCS Release]

[shikhachaudhary]

Surely Id3 >Id1 >Id2 because of increment in no. Of e-, charge carrier +creses and hence i +creses.

[VishalGupta-vrly]

the best explanation i had gone through many videos but this one is amazing

[SachinMishra-il]

its a saviour for end semester exam
thank you sir

[shubhamjaiswal]

watching 2 day before the exam and it is the best content of electronics

[shreyasn]

Thanks a lot for the lectures sir!! Very nice explanations. Could you please teach field theory also? It would help us a lot....

[nasrinriya]

Amazing Sir thank you so much...Tomorrow is my xm..this is very helpful

[AwesomeMinds]

id3>id2>id1 because in case 3: when we apply Vgs>0v since gate is at +ve voltage it will attract electrons from the p-substrate thus making more electrons for the conduction.

[picturization]

In case III where VGS>0, wouldn't it increase the depletion layer in the middle section of the N channel for the same reason, i.e. more reversed biased? If so, is it restricting the current ID in any way?

[kamranali]

Sir! why the pinch off voltage is same for all the values of Vgs?
As we've seen that it changes in emosfet or jfet

[abhibham]

Id3 is (increase rapidaly & high ) as compare to Id2 & id1
Thank u sir

[hemkumarpatel]

siddharth you are right, it was wrong. by increasing reverse bias voltage, depletion width is going to increase.

[riteshraj]

what is the difference between N-channel D-MOSFET and E-MOSFET, explain with their transfer function and output characteristic.

[fardeenahmed]

Thanks.... hope we will see some more tutorials

[v.kfunstudio]

at VGs >0 minority carriers i.e, electrons will be accelerated ? With whom it will collide? electrons in the n channel or between themselves?

[prashankbhardwaj]

Ty sir 4 it.this is awesome.keep doing this work.

[debapriyadasgupta]

why didn't we have recombination in case of enhancement-type MOSFET?

[siddharthkshirsagar]

sir at 6:09 you said with increasing reverse voltage the deplition region becomes narrow but actually it should be broad

[vinayvinnu]

when vgs =0 how does the e- moving from n region through p substrate

[changliu]

May I know why with negative V_GS both electrons and holes are attracted and that was called recombination, but with positive V_GS only electrons are attracted and that was called collision?

[anirudhmuthuswamy]

you said if we increase V(DS), after a point I(D) becomes constant due to reverse bias in the n-region under the drain. Why does I(D) increase in the first place if a reverse bias is present in the drain?