How to Extract SRAM Models

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This video shows how to extract SRAM device models efficiently on Keysight's device modeling platform. In the demo, circuit-level figures of merit (FOMs) of an SRAM cell, such as critical read and write current, are first defined. These FOMs and device-level I-V characteristics of individual transistors of the SRAM cell are then fitted simultaneously to optimize their SPICE model parameters. This unique flow allows for accurate and fast model extraction for the pass-gate, pull-up, and pull-down transistors all at the same time and guarantees model accuracy for SRAM cell-level specifications.