IGBT IV CHARACTERISTICS.

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Switching Characteristics of IGBT is basically the graphical representation of behavior of IGBT during its turn-on & turn-off process.
turn-on time is defined as the time between the instant of forward blocking to forward conduction mode. Here, forward conduction means the device conducts in forward direction. Turn-on time (ton) is basically composed of two different times: Delay time (tdn) and Rise time (tr). Therefore, we can say that ton = tdn + tr.

The delay time is defined as the time for the collector-emitter voltage (VCE) to fall from VCE to 0.9VCE. This simply means that, the collector-emitter voltage drops to 90% in delay time and hence the collector current rises from initial leakage current to 0.1IC (10%). Thus, delay time may also be defined as the time period during which collector current rises from zero (in fact a small leakage current) to 10% of the final value of collector current IC.

The rise time tr is the time during which collector-emitter voltage falls from 0.9VCE to 0.1 VCE. This means, during rise time collector-emitter voltage falls to 10% from 90%. Therefore, the collector current builds up to final value of collector current IC from 10%. After time ton, the collector current becomes IC and the collector-emitter voltage drops to very small value called conduction drop (VCES).