Alexander Holleitner - Atomistic defects in 2D materials as quantum emitters | Nano meets Quantum

Atomistic defects in 2D materials as quantum emitters

I will demonstrate the deterministic generation of single defects acting as quantum emitters in monolayer transition metal dichalcogenides (TMDCs) van der Waals heterostructure. The emitters are naturally confined to the few atoms limit axially while having a lateral creation accuracy of ~9 nm generated by highly local helium ion irradiation only limited by secondary ion events. We reach defect creation efficiencies close to unity in larger irradiated spots and as high as 18% for single shot irradiation. The optical line shape reveals a strong asymmetry resembling the interaction with LA/TA phonons. Employing the independent Boson model to our emission lines, we find that the emitters are spatially localized to a length scale of 2 nm, consistent with cryogenic scanning tunneling microscopy (STM) on the samples. I will also discuss the level structure, the magnetic properties, and the absorption characteristics of the emitters. The demonstrated methodology allows positioning single photon emitters with a precision of only a few nanometers in large arrays of quantum emitters and in already stacked heterostructures with electrostatic gates. Our work paves the way towards the controlled and deterministic generation of quantum emitters in monolayer TMDCs as well as photonic, optoelectronic, and plasmonic quantum devices.
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About this Conference:
The Confernece "Bridging the Gap: Nano meets Quantum" brings together young researchers of the Center for NanoScience (CeNS) and the Munich Center for Quantum Science and Technology (MCQST) with experienced scientists from the fields of physics and chemistry. The talks of the workshop are intended to give the graduate students and post-doctoral researchers of CeNS and MCQST an overview of current research topics on nanometer-scale and quantum science.
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