Large electric fields imaged in a new type of computer memory

Here biases varying from 0 - 12 V and then back to 0 V are applied to the Ti (top) electrode relative to the Pt (bottom) electrode. At biases ≤ 5 V the EBIC image contrast is generated by SEEBIC. At 10 V the large E-field at the tip of the soft filament creates strong standard EBIC contrast. At the highest bias, 12 V, the device is almost ON and intermittent device current produces streaking over the Pt electrode in the EBIC image. The last frame shows that all of these bias-induced changes are volatile: when the bias returns to 0 V, the device returns to its initial state.

To read more about this experiment please check out our published paper in Advanced Functional Materials: