[Electronics] High Resolution SEM of 10 nm FinFET

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Cross section of 10 nm FinFET was observed by high-resolution SEM on FIB-SEM. While SE image shows the structure of the oxide layer (STI, Shallow Trench Isolation), BSE image has strong compositional contrast to identify gate and metals without charging effects. SE/BSE mixed image contains both information.

Available instruments for this measurement are :
FIB-SEM

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#electronmicroscope
#electronmicroscopy
#scanningelectronmicroscope
#scanningelectronmicroscopy
  1. Hitachi Electron Microscope
  2. 10 nm
  3. FinFET
  4. STI
  5. FIB
  6. Focused Ion Beam
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