MOSFET- Channel Length Modulation Explained

In this video, the Channel Length Modulation effect in the MOSFET is explained. And, considering the effect of channel length modulation, the expression of the drain current and the output resistance is derived.

Timestamps for the different topics covered in the video:
0:00 Introduction
0:15 What is channel length modulation in MOSFET
3:48 Drain current equation with channel length modulation effect
7:10 The output resistance with channel length modulation effect

What is Channel Length Modulation?
For the enhancement type MOSFET, during the saturation region of operation, the length of the channel is a function of the drain to source voltage (Vds). As the drain to source voltage (Vds) is increased at the given voltage Vgs, then the length of the channel slightly reduces. The reduction in the channel length reduces the channel resistance. And hence the drain current also slightly increases.
That means in the saturation region of operation, the drain current is also a function of voltage Vds.

In this video, the expression of drain current with channel length modulation effect is derived. And at the later part of the video, the expression of the output resistance in terms of the channel length modulation co-efficient is also derived.

This video will be helpful to all the students of science and engineering in understanding the Channel Length Modulation effect in the MOSFET.

The other useful videos related to MOSFET:

1) Enhancement Type MOSFET:

2) MOSFET Biasing: Enhancement Type MOSFET Biasing Explained

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Timestamps for the different topics covered in the video:
0:00 Introduction
0:15 What is channel length modulation in MOSFET
3:48 Drain current equation with channel length modulation effect
7:10 The output resistance with channel length modulation effect

[honeypaaturi]

What more suggestions could we give, you're just being the you so much sir.

[mr.deepak._]

It's awesome than top engineering college lectures ❤

[indrashispowali]

Thank you very much for such a beautiful explanation

[vantuannguyen]

Hello!
What software do you use to write that, can you recommend it to me? Thank you

[anujparekh]

Plz upload new topics video on MOSFET series quickly like with 3-4day gap between video rather than 1 week plz 🙏🙏
Because my exam is coming shortly and I have to coplate this subject
Thanks

[human_being]

Thank you so much sir for this helpful video.

[Mr.PandeyRishav]

Sir here why drain current will not be zero in saturation mode? Because during channel length modulation depletion region touches the oxide layer.. So it should block the path of drain current.. But practically drain current is not zero why?

[mrigankadas]

Need topics on Thyristors DIACs TRIACs IGBTs

[swaritmahalsekar]

Sir consider lambda as x, why (x' / L) * Vds is consider as (xL) * Vds? in equation at 6.38

[p.krajput]

I think their should be mistake in graph because here our main conclusion is as we increase our Vds the current(Ids) should not change in ideal case and it should be more then the non-ideal case [we are getting lower Ids current than what we have i think your blue line should come above yellow line.

[NW]

Thank you for uploading the video.
How do you know that, at 6:13, dL is proportional to Vd?

[ΣωτήρηςΤ-σν]

- What’s the effect of increased VGS on RDS(on) in the saturation mode?

[IITianAbhaySrivastav]

one doubt is coming in my mind how the mosfet will work in pinch off condition as channel is pinched off there is no path for charge carriers thus no current should be there?

[प्रणव_गुप्ता]

Sir where u have used the term "Va" ?? And please explain what is Va ?

[yashjadhav]

if channel length decreases then there will be no channel between source and drain so Id current should decrease then why it is increasing

[raheemabdulhussien]

Why the mosfet is on while the VGS is approximately =0 V?

[ashikmohammed]

add some examples or some problems for the above topic then it would be much better

[madhav]

For problems involving channel length modulation, if we are asked to calculate transconductance then do we have to include CLM coefficient in the expression for gm or do reply

[prabhubalajimanoharan]

Please Cover, TRIAC, DIACs, IGBT, THYRISTOR