RA30H1317M RF MOSFET Amplifier Module, Utsource.

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Introduction:
The RA30H1317M is among the SiRF(Silicon Radio Frequency) device family for power amplification, by design it is an Enhancement-Mode MOSFET Transistors produced by Mitsubishi electric, the electronic module has an output power greater than 30-watt suitable for high power dissipation. The module works best as a non-linear FM modulation Module with a Broadband Frequency Range of 135-175-MHz range.

Application:
The RA30H1317M MOSFET is an important element in all embedded system design which is mostly used for radio communication network, power output control and fast on/off switching as per the designer requirement. Many electronic projects are developed using the RA30H1317M MOSFET such as Marine Radio, Telematics AMPS/GSM, Professional Mobile Radio (walkie talkie), and light intensity control. The RA30H1317M MOSFET is also a high voltage electronic device which offers significant features to circuit designers such as Voltage Regulator, and Switch Mode Power Supply (SMPS)

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