4th Berkeley Symposium - TFET Panel

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Presented by Patrick Xiao, James Teherani, David Esseni, Suman Datta, Shinichi Takagi
  1. E3S Center
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4th Berkeley Symposium - Opening Remarks

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19. Electrostatic Design 0:13:23

19. Electrostatic Design of Vertical Tunneling Field-Effect Transistors

21. Full-Quantum Simulation 0:16:57

21. Full-Quantum Simulation Of Heterojunction TFET Inverters Providing Better Performance

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PQI2016 Huili Grace Xing: Progress toward Thin-TFET: a 2D material based transistor

15. Why Tunneling 0:19:26

15. Why Tunneling FETs Don't Work, and How to Fix It

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TFET Device operation

14. Strained Si 0:23:37

14. Strained Si Nanowire Tunnel FETs and Inverter

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Scalability assessment of Group-IV mono-chalcogenide based tunnel FET

18. Tunnel FETs 0:28:27

18. Tunnel FETs with Tunneling Aligned with Gate

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Tunneling Field Effect Transistor

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