filmov
tv
ZnTe crystal 10x10x3 mm, 110-cut for terahertz-probe spectroscopy sales@dmphotonics.com
Показать описание
more:
ZnTe
CR-ZnTe-10-10-0.3 ZnTe crystal, 10x10x0.3 mm, 001-cut
CR-ZnTe-10-0.5 ZnTe crystal, 10x10x0.5 mm, 110-cut
CR-ZnTe-10-10-1 ZnTe crystal, 10x10x1 mm, 110-cut
CR-ZnTe-10-10-2 ZnTe crystal, 10x10x2 mm, 100-cut
CR-ZnTe-10-10-2 ZnTe crystal, 10x10x2 mm, 110-cut
CR-ZnTe-10-10-3 ZnTe crystal, 10x10x3 mm, 110-cut
CR-ZnTe-20-20-0.2 ZnTe crystal, 20x20x0.2 mm, 110-cut
CR-ZnTe-20-20-0.5 ZnTe crystal, 20x20x0.5 mm, 110-cut
CR-ZnTe-20-20-0.5-AR ZnTe crystal, 20x20x0.5 mm, 110-cut, AR coated
CR-ZnTe-5-5-0.15 ZnTe crystal, 5x5x0.15 mm, 110-cut
CR-ZnTe-5-5-0.2 ZnTe crystal, 5x5x0.2 mm, 110-cut
Del Mar Photonics supply variety of crystals for THz generation, including ZnTe, GaP, GaSe, LiNbO3 and others
110-cut GaP (used @1030nm)
110-cut GaAs (used @1560nm)
110-cut ZnTe (used @800nm)
Terahertz systems, set ups and components
New band pass and long pass THz optical filters based on porous silicon and metal mesh technologies.
Band pass filters with center wavelengths from 30 THz into GHz range and transmissions up to 80% or better. Standard designs
with clear aperture diameters from 12.5 to 37.5 mm.
Long pass filters with standard rejection edge wavelengths from 60 THz into GHz range. Maximum transmission up to 80% or
better, standard designs at 19.0 and 25.4 mm diameters.
Excellent thermal (from cryogenic to 600 K) and mechanical properties
THz products:
Portable Terahertz Source
THz Spectrometer kit with Antenna
THz transmission setup
THz time domain spectrometer Pacifica fs1060pca
THz time domain spectrometer Pacifica fs780pca
THz detectors: Golay cell and LiTaO3 piroelectric detectors
PCA - Photoconductive Antenna as THz photomixer
Pacifica THz Time Domain Spectrometer - Trestles Pacifica
Holographic Fourier Transform Spectrometer for THz Region
Wedge TiSapphire Multipass Amplifier System - THz pulses generation
Terahertz Spectroscopic Radar Mobile System for Detection of Concealed Explosives
Band pass filters with center wavelengths from 30 THz into GHz range
Long pass filters with standard rejection edge wavelengths from 60 THz into GHz range
Generation of THz radiation using lithium niobate
Terahertz crystals (THz): ZnTe, GaAs, GaP, LiNbO3 - Wedge ZnTe
Silicon Viewports for THz radiation
Aspheric collimating silicon lens - Aspheric focusing silicon lens
Featured research:
Charge Carrier Dynamics in Metalated Polymers Investigated by Optical-Pump
Terahertz-Probe Spectroscopy
We report charge carrier dynamics in solid films of a series of metalated polymers based on Pt- and 4,7-di-2′-thienyl-2,1,3,-benzothiadiazole or 4,7-di-2′-thienothienyl-2,1,3,-benzothiadiazole upon photoexcitation ofthe π-π* transition using optical-pump terahertz-probe spectroscopy. Subpicosecond generated charge carriers recombine within 100 ps, but bound excitons persist. Application of the Drude-Smith model allows for estimation of the intrinsic mobility and internal quantum yield of charge carrier generation in these films. Thermal annealing is found to have no effect on nanometer scale charge transport.
Semiconducting π-conjugated polymers are under intense study for potential applications in electronic devices; for example, organic field-effect transistors (OFET) and organic
photovoltaics (OPV). Much attention has been given to material systems with strong π-π interactions that self-assemble into polycrystalline films; for example, poly(3-hexylthiophene-2,5-diyl) (P3HT).1 Although these systems exhibit high OFET mobilities2 and OPV power conversion efficiencies (PCE),3 their optoelectronic properties are highly sensitive to processingconditions.
Комментарии