[Electronics] 120 kV Plane View TEM of 3D NAND Flash Memory

Plane view TEM of 3D NAND flash memory was performed on 120 kV TEM. Ordered arrangement of circular memory holes was confirmed at low magnification. Concentric multi-layer structure of SiO /Poly Si /SiO /SiN /SiO was clearly observed. Lattice fringe with 0.31 nm spacing in Poly Si layer can be used to calibrate the measurement of each layer.

Available tools for this measurement are :
TEM
FIB-SEM

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#electronmicroscope
#electronmicroscopy
#transmissionelectronmicroscope
#transmissionelectronmicroscopy