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Texas Instruments LMG3410R070 Gallium Nitride Power Stage | First Look
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Welcome to First Look, brought to you by Digi-Key and Texas Instruments.
Gallium nitride is driving remarkable changes in power engineering. GaN FETs enable higher density designs that are faster and more efficient than an equivalent design based on silicon MOSFETs. GaN FETs also have no body diode, which enables new topologies to drive power density and efficiency even higher.
Texas Instrumennts’ LMG3410R070 integrates the 600V, 70mΩ GaN FET, gate driver, and protection functions in an 8mm x 8mm low inductance QFN package that requires only a 12V unregulated supply for operation. The integration simplifies design, enhances reliability, and allows designers to optimize performance in any power supply application.
Properly driving GaN FETs is one of the most common challenges in implementing GaN in power supplies. Thanks to its integrated gate driver, the LMG3410R070 can be easily driven through a CMOS-compatible input, and its Direct Drive architecture delivers superior switching performance compared to a cascode design. It has a 20ns propagation delay, which allows for operation into the MHz.
The integrated driver also enables fast switching, with slew rates up to 100V/ns and with minimal ringing thanks to the low inductance package design. This improves efficiency and reduces EMI, and EMI can be further controlled by using an external resistor to adjust the drive strength and optimize performance for the application.
The LMG3410R070 is built for lifetime reliability. TI’s GaN process has been thoroughly qualified through in-application stress testing in the harshest switching environments. The LMG3410R070 adds to this, with built-in overcurrent protection, overtemperature protection, and undervoltage lockout, as well as immunity to drain slew rates up to 150V/ns and transient overvoltages. No external protection components are needed, and the device has a digital fault status output to indicate its status.
See you next time on First Look.
Gallium nitride is driving remarkable changes in power engineering. GaN FETs enable higher density designs that are faster and more efficient than an equivalent design based on silicon MOSFETs. GaN FETs also have no body diode, which enables new topologies to drive power density and efficiency even higher.
Texas Instrumennts’ LMG3410R070 integrates the 600V, 70mΩ GaN FET, gate driver, and protection functions in an 8mm x 8mm low inductance QFN package that requires only a 12V unregulated supply for operation. The integration simplifies design, enhances reliability, and allows designers to optimize performance in any power supply application.
Properly driving GaN FETs is one of the most common challenges in implementing GaN in power supplies. Thanks to its integrated gate driver, the LMG3410R070 can be easily driven through a CMOS-compatible input, and its Direct Drive architecture delivers superior switching performance compared to a cascode design. It has a 20ns propagation delay, which allows for operation into the MHz.
The integrated driver also enables fast switching, with slew rates up to 100V/ns and with minimal ringing thanks to the low inductance package design. This improves efficiency and reduces EMI, and EMI can be further controlled by using an external resistor to adjust the drive strength and optimize performance for the application.
The LMG3410R070 is built for lifetime reliability. TI’s GaN process has been thoroughly qualified through in-application stress testing in the harshest switching environments. The LMG3410R070 adds to this, with built-in overcurrent protection, overtemperature protection, and undervoltage lockout, as well as immunity to drain slew rates up to 150V/ns and transient overvoltages. No external protection components are needed, and the device has a digital fault status output to indicate its status.
See you next time on First Look.
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