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Meaghan's Minute: High-Power GaN Transistors
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Richardson RFPD has announced a new line of high power GaN transistors in rugged, space-saving plastic packages from MACOM.
The new plastic-packaged GaN on Silicon Carbide power transistors offer comparable reliability and a lighter-weight compared to conventional ceramic-packaged GaN devices. They new include 90, 50 and 15 Watt transistors, available in standard 3 x 6 millimeter DFN packaging.
The devices offer wide frequency bandwidth, exceptionally high power added efficiency (PAE), and low overall power transistor size.
For more information, check out:
The new plastic-packaged GaN on Silicon Carbide power transistors offer comparable reliability and a lighter-weight compared to conventional ceramic-packaged GaN devices. They new include 90, 50 and 15 Watt transistors, available in standard 3 x 6 millimeter DFN packaging.
The devices offer wide frequency bandwidth, exceptionally high power added efficiency (PAE), and low overall power transistor size.
For more information, check out: