Why gate drivers are joining eGaN transistors on the same chip

Power transistors made with eGaN technology can switch in a nanosecond or less. The circuit necessary to drive these transistors tend involve a lot of parasitic elements that can contribute to ringing and other sub-optimum effects. As explained by EPC's Alex Lidow, combining the eGaN gate driver on the same chip as the power transistor itself avoids such problems. The resulting gate drive/power transistor can run directly from a CMOS logic chip. This simplifies the design of power electronics as used for wireless power schemes that eliminate the need for ac cords.