ROHM 4th Generation SiC MOSFET and Power Devices

ROHM has recently released its 4th Generation SiC MOSFETs that deliver unprecedented ON resistance along with faster switching speeds to meet the increasing demands of the latest EV powertrain systems and power supplies for industrial equipment. Adopting a unique double trench structure allows ROHM to successfully reduce ON resistance per unit area by 40% over existing solutions without sacrificing short-circuit withstand time. At the same time, parasitic capacitance is significantly reduced, making it possible to achieve 50% lower switching loss. The lineup will be available in discrete package types as well as bare chips in both 750V and 1200V variants.

Follow us on Social Media: