ECE 606 Solid State Devices L20.3: PN Diode I-V Characteristics - Forward Bias - Non-Linear Regime

Table of Contents:
00:00 S20.3 Forward Bias - Non-linear Regime
00:20 Section 20 PN Diode I-V Characteristics
00:34 Nonlinear Regime (3) …
02:36 Flat Quasi-Fermi Level up to Junction ?
11:57 Forward Bias: Nonlinear Regime …
13:56 Current and Fermi Level Drop – A general concept
15:28 Section 20 PN Diode I-V Characteristics
15:35 Section 20 PN Diode I-V Characteristics
15:37 Region (2): Ambipolar Transport
16:12 Nonlinear Regime: Ambipolar Transport
21:00 Region (2): Ambipolar Transport
22:48 Section 20 PN Diode I-V Characteristics
22:58 Section 20 PN Diode I-V Characteristics

This course provides the graduate-level introduction to understand, analyze, characterize and design the operation of semiconductor devices such as transistors, diodes, solar cells, light-emitting devices, and more.

The material will primarily appeal to electrical engineering students whose interests are in applications of semiconductor devices in circuits and systems. The treatment is physics-based, provides derivations of the mathematical descriptions, and enables students to quantitatively analyze device internal processes, analyze device performance, and begin the design of devices given specific performance criteria.

Technology users will gain an understanding of the semiconductor physics that is the basis for devices. Semiconductor technology developers may find it a useful starting point for diving deeper into condensed matter physics, statistical mechanics, thermodynamics, and materials science. The course presents an electrical engineering perspective on semiconductors, but those in other fields may find it a useful introduction to the approach that has guided the development of semiconductor technology for the past 50+ years.