[SGeC] IRF520N Power MOSFET 100V-9.7A

Type Designator: IRF520N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 48 W
Maximum Drain-Source Voltage |Vds|: 100 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 9.7 A
Maximum Junction Temperature (Tj): 175 °C
Total Gate Charge (Qg): 25(max) nC
Rise Time (tr): 23 nS
Drain-Source Capacitance (Cd): 92 pF
Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm
Package: TO220AB