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MMDF3P03HDR2G-VB 2 P-channel SOP8 package MOS tubes
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Model: MMDF3P03HDR2G-VB
Silk screen: VBA4338
Brand: VBsemi
parameter:
- Type: 2 P channels
- Rated voltage (Vds): -30V
- Maximum continuous current (Id): -7A
- On-resistance (RDS(ON)): 35mΩ @ 10V
- Gate-source voltage range (Vgs): 20V (positive and negative)
- Threshold voltage (Vth): -1.5V
-Package: SOP8
Application introduction:
MMDF3P03HDR2G-VB is a dual P-channel field effect transistor (MOSFET) suitable for electronic applications requiring negative voltage operation. It has a wide range of applications in power switches, battery management and load switches.
Detailed parameter description:
1. **Type**: This is a dual P-channel MOSFET, which means it conducts when a negative voltage is input. This type of MOSFET is usually used in circuits that need to control two negative voltages at the same time.
2. **Rated Voltage (Vds)**: The maximum drain-source voltage it can withstand is -30V. This means it can operate under negative voltage conditions.
3. **Maximum continuous current (Id)**: The maximum current capability of this MOSFET is -7A. The negative sign indicates that the current flows from source to drain.
4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on-state, which affects the power consumption and efficiency of MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 35mΩ, indicating relatively low power consumption in the on state.
5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of MOSFET is 20V, which means that a voltage of up to 20V is required to control its conduction state.
6. **Threshold Voltage (Vth)**: The threshold voltage of this MOSFET is -1.5V. This is the gate-source voltage that turns the MOSFET on.
7. **Package**: This MOSFET comes in SOP8 package, which is a common packaging type suitable for a variety of circuit applications.
Application areas:
MMDF3P03HDR2G-VB is a dual P-channel MOSFET suitable for a variety of electronic modules and devices that require negative voltage operation, including but not limited to modules in the following fields:
1. **Power switch**: Can be used for negative voltage power switches, such as voltage conversion and power control.
2. **Battery Management**: Can be used for battery charging and discharge management to ensure safe and efficient battery use.
3. **Load switch**: used to control the on and off of loads, such as LED lighting systems, power tools and electronic equipment.
4. **Power Protection**: Can be used in power protection circuits to prevent overcurrent, overvoltage and other abnormal conditions.
5. **Current Control**: Can be used in current control circuits, such as motor control and current amplifiers.
In short, this dual P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing power control and current management functions, especially in applications that require the control of two negative voltages.
Silk screen: VBA4338
Brand: VBsemi
parameter:
- Type: 2 P channels
- Rated voltage (Vds): -30V
- Maximum continuous current (Id): -7A
- On-resistance (RDS(ON)): 35mΩ @ 10V
- Gate-source voltage range (Vgs): 20V (positive and negative)
- Threshold voltage (Vth): -1.5V
-Package: SOP8
Application introduction:
MMDF3P03HDR2G-VB is a dual P-channel field effect transistor (MOSFET) suitable for electronic applications requiring negative voltage operation. It has a wide range of applications in power switches, battery management and load switches.
Detailed parameter description:
1. **Type**: This is a dual P-channel MOSFET, which means it conducts when a negative voltage is input. This type of MOSFET is usually used in circuits that need to control two negative voltages at the same time.
2. **Rated Voltage (Vds)**: The maximum drain-source voltage it can withstand is -30V. This means it can operate under negative voltage conditions.
3. **Maximum continuous current (Id)**: The maximum current capability of this MOSFET is -7A. The negative sign indicates that the current flows from source to drain.
4. **On-resistance (RDS(ON))**: RDS(ON) is the resistance in the on-state, which affects the power consumption and efficiency of MOSFET. At a gate-source voltage of 10V, its RDS(ON) is 35mΩ, indicating relatively low power consumption in the on state.
5. **Gate-source voltage range (Vgs)**: The gate-source voltage range of MOSFET is 20V, which means that a voltage of up to 20V is required to control its conduction state.
6. **Threshold Voltage (Vth)**: The threshold voltage of this MOSFET is -1.5V. This is the gate-source voltage that turns the MOSFET on.
7. **Package**: This MOSFET comes in SOP8 package, which is a common packaging type suitable for a variety of circuit applications.
Application areas:
MMDF3P03HDR2G-VB is a dual P-channel MOSFET suitable for a variety of electronic modules and devices that require negative voltage operation, including but not limited to modules in the following fields:
1. **Power switch**: Can be used for negative voltage power switches, such as voltage conversion and power control.
2. **Battery Management**: Can be used for battery charging and discharge management to ensure safe and efficient battery use.
3. **Load switch**: used to control the on and off of loads, such as LED lighting systems, power tools and electronic equipment.
4. **Power Protection**: Can be used in power protection circuits to prevent overcurrent, overvoltage and other abnormal conditions.
5. **Current Control**: Can be used in current control circuits, such as motor control and current amplifiers.
In short, this dual P-channel MOSFET is suitable for electronic modules and devices that require negative voltage operation, providing power control and current management functions, especially in applications that require the control of two negative voltages.