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(Re-run of Puurunen at AVS69) on Conformality Analysis of Films made by Atomic Layer Deposition
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Title: Recent Progress in Analysis of the Conformality of Films by Atomic Layer Deposition
Author: Prof. Riikka Puurunen, Aalto University, Finland
Originally presented on 8.11.2023 at event AVS69 (Atomic Scale Processing Mini-Symposium, Session: AP7+TF: Novel ALD/CVD Precursors and Processes for High Aspect Ratio Architectures, Invited Paper); Re-run afterwards for sharing at the Chipmetrics Webinar 29.11.2023 and elsewhere
ABSTRACT (partly here).
Conformality is a fundamental characteristic of atomic layer deposition (ALD) thin film growth technique. “Conformal” film refers to a film that covers all surfaces of a complex three-dimensional substrate with everywhere the same thickness and properties. ALD - invented independently by two groups in 1960s and 1970s - has since late 1990s been transformational in semiconductor technology. Apart from semiconductors, conformal ALD films find applications and interest in widely varied fields such as microelectromechanical systems, pharmaceutical powder processing, optical coatings, battery technologies and heterogeneous catalysts.
Conformality follows directly from the “ideal ALD” principles: growth of material through the use of repeated separate self-terminating (i.e., saturating and irreversible) gas-solid reactions of at least two compatible reactants on a solid surface. Obtaining conformality in practice is not self-evident, however. Reasons for deviation from conformality are multiple, ranging from mass transport limitations to slow reaction kinetics and various deviations from ideal ALD (e.g., by-product reactivity or a continuous chemical vapor deposition (CVD) component through reactant decomposition or insufficient purging). Incomplete conformality can also be intentional: a saturation profile inside a feature can be exposed, to enable an analysis of kinetic parameters of the reactions.
Author: Prof. Riikka Puurunen, Aalto University, Finland
Originally presented on 8.11.2023 at event AVS69 (Atomic Scale Processing Mini-Symposium, Session: AP7+TF: Novel ALD/CVD Precursors and Processes for High Aspect Ratio Architectures, Invited Paper); Re-run afterwards for sharing at the Chipmetrics Webinar 29.11.2023 and elsewhere
ABSTRACT (partly here).
Conformality is a fundamental characteristic of atomic layer deposition (ALD) thin film growth technique. “Conformal” film refers to a film that covers all surfaces of a complex three-dimensional substrate with everywhere the same thickness and properties. ALD - invented independently by two groups in 1960s and 1970s - has since late 1990s been transformational in semiconductor technology. Apart from semiconductors, conformal ALD films find applications and interest in widely varied fields such as microelectromechanical systems, pharmaceutical powder processing, optical coatings, battery technologies and heterogeneous catalysts.
Conformality follows directly from the “ideal ALD” principles: growth of material through the use of repeated separate self-terminating (i.e., saturating and irreversible) gas-solid reactions of at least two compatible reactants on a solid surface. Obtaining conformality in practice is not self-evident, however. Reasons for deviation from conformality are multiple, ranging from mass transport limitations to slow reaction kinetics and various deviations from ideal ALD (e.g., by-product reactivity or a continuous chemical vapor deposition (CVD) component through reactant decomposition or insufficient purging). Incomplete conformality can also be intentional: a saturation profile inside a feature can be exposed, to enable an analysis of kinetic parameters of the reactions.